The buffer layer can be AlN, and the metal layer ZrN.
The lower electrode layer is mainly composed of TiN or ZrN, while containing oxygen.
The invention is characterised in that the metal nitride comprises zirconium nitride ZrN at least partly crystallised.
The ZrN layer provides an integral back reflector, ohmic contact to n-GaN.
The material may contain secondary crystalline phases such as SiC, TiN, TiCN, TiC, ZrN and/or ZrC.
Material transparent at infra red wavelengths, 3-5 and 8-14 νm is formed of ZrN, YN, CeN, TLN, or EuN.
The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru.
The preferred second ceramic material is HfB2, TaB, TaB2, TiB2, ZrB2, (Ti,Zr)B2, HfC, ZrC, (Ta,Ti)C, HfN, NbN, (Ta,Ti)N, (Ti,Zr)N, ZrN, TiC, TaC, NbC, VC or any mixture thereof.
A cutting tool having a sintered compact including 30 to 80 vol.% cubic boron nitride and a binder phase, wherein the binder phase includes about 2 to about 6 vol.% ZrN, is disclosed.
A cutting tool (10) for a machine tool has a substrate (20) and one or more coating layers (12-18) of materials with different Raman spectra, e.g. Tin, TiA1N, TiA1XN (where X = Y, Cr, Nb, W, Mo or the like), AlN, TiC, ZrN, TiZrN, CrN or VN.
Reaction kinetics measured using thermogravimetry and physicochemical characterisations of cladding after testing have demonstrated the important role of an autocatalytic reaction involving zirconium nitride (ZrN).
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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