The intrinsic region increases the efficiency of the switch and reduces losses.
This disclosure describes a switch having a collector, base, emitter, and an intrinsic region between the collector and base.
When a SPIN device is activated, the surface of the device is injected with carriers such that a plasma is produced within the intrinsic region of the device.
A prior art semiconductor component representing a pin photodiode has a waffle-like structure in that a p region is arranged above and an n region below an intrinsic zone.
The depletion layer associated with the p-n junction is entirely contained within the i-type region in the p-i-n structure.
These silicon-based detectors are made up of three eponymous semiconductor types: P-type, Intrinsic, N-type.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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