The substrate consists of an excavated substrate region, and a support region, the support region is in contact with the insulator layer.
The system utilizes concentrated megasonic energy on one wafer (90) to dramatically reduce cleaning time.
The system uses a transducer (210) parallel to the substrate (90) to be cleaned where the transducer area is more than about 40 % of the substrate area.
The substrate (100) comprises an inner substrate region (110) of a substrate thickness (101 ) and an edge region (120), in which the substrate thickness (101) is reduced, the edge region (120) having an edge region width (121).
The housing, essentially, completely surrounds the substrate in a first substrate area.
The housing is at least partially opened, by means of an opening, in a second substrate area and the second substrate area protrudes from the housing in the region of the second substrate area.
The heat applied to the area of the substrate forms a mark (24) inside the substrate that stores information identifying the photomask substrate (16).
In a CMOS embodiment of the present invention, the first region of the semiconductor substrate comprises p-type silicon while the second substrate region comprises n-type silicon.
Secondly, an impurity region having the same conductivity type as that of a substrate is provided at a high concentration in a substrate region between assist gates adjacently provided.
The housing is at least partially opened, by means of an opening, in a second substrate area and the second substrate area protrudes from the housing in the region of the second substrate area.
The housing, essentially, completely surrounds the substrate in a first substrate area.
On the periphery of the n-type impurity region (22), a p-type substrate region (21a) having the same resistivity as that of the p-type semiconductor substrate layer (21) is arranged.
A substrate may be configured with a substrate polarization area.
The substrate consists of an excavated substrate region, and a support region, the support region is in contact with the insulator layer.
The system utilizes concentrated megasonic energy on one wafer (90) to dramatically reduce cleaning time.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Traduction Translation Traducción Übersetzung Tradução Traduzione Traducere Vertaling Tłumaczenie Mετάφραση Oversættelse Översättning Käännös Aistriúchán Traduzzjoni Prevajanje Vertimas Tõlge Preklad Fordítás Tulkojumi Превод Překlad Prijevod 翻訳 번역 翻译 Перевод