The third connection portion is joined t o a branch connection portion between the second connection portion and the first anchor portion of the second tape section.
The second connection portion is joined to the first connection portion of the first tape section.
The invention relates to a junction-gate field-effect transistor comprising a semiconductor zone (10) which presents an inner area (13) as well as a first (22) and a second (32) connecting area.
In an alternate embodiment, a bond pad has a probe region , a first wire bond region , and a second wire bond region .
The contact device (5) comprises a contact region (50).
A bond pad (200) has a first wire bond region (202) and a second wire bond region (204).
The fastener device further includes a third tape section having a third connection portion and a second anchor portion next to the third connection portion.
The connector comprises a first conductive region (204; 710) and a first connection region (712).
The first module includes a connection area (301) that is engageable with a connection area included in the second module.
A coating which covers the connecting region is then applied to those regions of the trenches in which the connecting region has been exposed.
The invention relates to a contact for a plug connector with an elongated contact region and a connection region, the contact region having a first contact segment which is arranged opposite a second contact segment.
The connection device (10) is formed as a metallic section and/or an alloy section having a buffer region (12), an intermediate region (14) and a connection region (16).
The optical disc has a plurality of recording layers, each recording layer including: a data area; a connecting area; and a remaining area.
A method of fabricating a high-output, vertical field-effect transistor having high switching characteristics, which requires only one step to form an N+ connection region and an N- connection region though two steps are required conventionally.
Each inner electrode comprises a connection area and an overlapping area adjacent thereto.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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