The anneal is preferably a flash anneal or laser anneal.

In yet another embodiment of the present invention, the thermal annealing step may include a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike anneal.

The apparatus may further include an annealing furnace for annealing the glass sheet.

A spike anneal or a laser anneal diffuses the implanted dopants into the IC substrate.

There follows recrystallisating annealing with simultaneous decarburisation, application of a separating agent, high temperature annealing and, after application of an insulating layer, final annealing.

An annealing separator is spread on the steel sheet, and a final high temperature annealing is carried out.

A pressurizing type lamp annealing device and a pressurizing type lamp annealing method capable of performing a lamp annealing in a pressurized state, a thin film, and an electronic component.

The invention addresses the problem of providing an annealing method and annealing device making it possible to subject a crystalline resin film to an annealing enabling proper crystallization and efficient removal of distortion.

In the second annealing process, annealing is carried out with a gas, which includes oxygen gas, serving as an atmosphere gas.

In an annealing process, a reactor is formed using a powder magnetic core produced by annealing the compact under the non-oxidizing atmosphere.

The high density article is then annealed.

In the first annealing process, annealing is carried out by means of nitrogen gas, which is an inert gas, serving as an atmosphere gas.

The cold strip is then subjected to recrystallisation and decarbonization annealing, provided with an annealing separator containing mainly MgO, then subjected to a final anneal for improving the grain oriented texture.

According to need, the plate may be subjected to straightening (straightening step) and a heat treatment, e.g., annealing (annealing step).

Thermal annealing is used to stabilize the implanted charge.