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tunnellisation de Fowler- Nordheim

Fowler-Nordheim tunneling

électronique et électrotechnique - acta.es

Publications scientifiques

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Nanoscale two-bit/cell nand silicon-oxide-nitride-oxide-silicon flash memories with an advanced saddle structure... The program and the erase characteristics of the Fowler-Nordheim tunneling processes were estimated to verify the unique two-bit/cell SONOS memories....

électronique et électrotechnique - core.ac.uk - PDF: www.kci.go.kr

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Conduction and trapping mechanisms in sio2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition... From the temperature dependence of current density-electric field characteristics, Fowler-Nordheim tunneling was found to be the dominant conduction mechanism in SiO2 films obtained with low silane flow and at low pressure....

électronique et électrotechnique / communication - core.ac.uk - PDF: www.loc.gov

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Trap-assisted transition between schottky emission and fowler-nordheim tunneling in the interfacial-memristor based on bi2s3 nano-networks... It considers the trap-assisted transition between Schottky emission and Fowler-Nordheim tunneling, and successfully reproduces the memristive behaviors occurring on the interface between Bi2S3 nano-networks and F-doped SnO2....

général - core.ac.uk - PDF: doaj.org

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Analysis of integrated single-electron memory operation... In particular, weanalyze the single-electron charging by Fowler-Nordheim tunneling, propose theidea of background charge compensation, and discuss the defect-tolerantarchitecture based on nanofuses.Comment:...

général - core.ac.uk - PDF: arxiv.org