The lateral bipolar transistor operates as a charge injector.
The lateral bipolar transistor (62) operates as a charge injector.
A CMOS device forms the basis of the CMOS-based lateral bipolar transistor.
A select transistor can have a source which also acts as the emitter of a lateral bipolar transistor.
A second lateral bipolar transistor is formed in the cathode region.
An electrical circuit including an NMOS (20) or lateral NPN bipolar transistor (136) includes a zener diode (28) connected thereto to provide ESD protection for the transistor.
The lateral NPN bipolar transistor (136) includes an N-type emitter (138) and collector (140) and a P-type base (142).
A lateral Insulated Gate Bipolar Transistor (LIGBT) includes a semiconductor substrate and an anode region in the semiconductor substrate.
A lateral bipolar transistor for an integrated circuit is provided that maintains a high current gain and high frequency capability without sacrificing high Early voltage.
The anode is connected to the gate and the comparable MOSFET source region which has highly doped regions of both conductivity types connected to the channel region to thereby create a lateral bipolar transistor having its base in the channel region.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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