Method and apparatus for removal of remaining photoresist material and halogen residues (9) after etching from a polysilicon or metallized wafer (15, 35, 55).
Method and apparatus for removal of remaining photoresist material and halogen residues (9) after etching from a polysilicon or metallized wafer (15, 35, 55).
A metalized film capacitor has a metalized film.
a metallised aluminium layer, and
a metallised aluminium layer, and
Said reinforcement is provided on the metallised face, the non-metallised face or both.
a metallised aluminium layer, and
a metallised aluminium layer, and
Finally the surface is selectively plated.
A conducting body (102), provided in the wafer beneath the device region and extending laterally, may connect the via with the matallized opening (103) in the back surface.
The remaining interior metallized portion (52) isolated from the exterior metallized section (46) forms an antenna sense element.
The sensor is formed by the metallized portion of the diaphragm and the metallized portion of the housing cover.
The unmetallized line is designed with a length greater than one-half of the length of the metallized belt, but smaller than the length of the metallized belt.
This ensures that the device is flat.
A glass layer (20) is metallized on both sides and has holes drilled in locations that align with the diaphragms formed on the silicon wafer (10).
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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