For the breakdown voltages it holds true that the breakdown voltage of the PN diode BV_pn is lower than the breakdown voltage of the Schottky diode BV_schottky.
An operational amplifier capable of attaining a high breakdown voltage.
Because an individual junction gate has an intrinsically high breakdown voltage, the breakdown voltage of the double-gate semiconductor device is greater than the breakdown voltage of an individual MOS gate.
This transzorb (24) clamps the output voltage to its breakdown voltage.
According to the invention, the breakdown voltage of the PN diode BV_pn is much lower than the breakdown voltage of the Schottky diode BV_schottkyt, wherein the semiconductor assembly can be operated by high currents in breakdown.
Therefore, compared with the related art, the capacitor according to the present invention demonstrates an increased dielectric breakdown voltage (BDV) and improved LC (leakage current) characteristics, and does not cause a rapid breakdown phenomenon.
The dielectric breakdown voltage of such a wound plastic film capacitor is almost equivalent to that of conventional types in which impregnation with epoxy resin is carried out.
The film has such a high glass transition temperature and is excellent in insulation volume resistance and dielectric breakdown voltage at high temperatures.
This test checks that the dielectric breakdown voltage of the oil in the main tank is above a minimum threshold.
A thin film transistor having a high dielectric breakdown voltage formed on the polycrystalline silicon oriented within a short time can be produced within a short time.
A gas-insulated system that contains the inventive insulators that are provided with such a protective body has an increased disruptive voltage.
The invention concerns a solid-state p-channel high-voltage component with a gate terminal which has a gate-oxide/field-oxide stage extending towards a drain terminal, the component exhibiting a high, stable lateral breakdown voltage.
Therefore, the theoretical withstand voltage in the n-- type semiconductor layer (38) is higher than the theoretical withstand voltage in the n- type semiconductor layer (36), and the surface breakdown voltage can be correspondingly increased.
The devices enable substantially higher breakdown voltage on hetero-epitaxial substrates (<2KV) and extremely high breakdown voltage on homo-epitaxial substrates (>2KV).
Thus, the trench-type MOSFET having a high breakdown voltage is provided.
The breakdown voltage characteristic of the insulating film is improved.
An n-- type semiconductor layer (38) is provided at a portion which is likely to cause surface breakdown, and an n- type semiconductor layer (36) is disposed below the former.
Through this configuration, a low threshold voltage and a large breakdown voltage are obtained.
The second electrical discharge device has a second breakdown voltage.
The first electrical discharge device has a first breakdown voltage.
A first semiconductor chip (1) of a high breakdown voltage is connected with a second semiconductor chip (2) of a low breakdown voltage in a package (3).
As a result, the magnitude of the collector-to-emitter breakdown voltage typically increases.
The thickness of the drift region determines the drain-source breakdown voltage.
The breakdown voltage may be influenced only to a small extent.
This improves both the capacitance swing and the breakdown voltage.
If the length of the second part gate is set to be the preset length value, the breakdown voltage of the LDMOS can basically reach a maximum breakdown voltage value.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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