The analysis method comprises the step of irradiating a minute area with an accelerated electron beam to desorb organic molecules, and subjecting them to mass analysis, wherein the beam acceleration voltage is such that it is sufficient to cause ESD.

The depth of the exposed parts 31 can be controlled by changing the acceleration voltage of the electron beam.

Further, since the acceleration voltage of the incident electron beam can be increased, the metal film (11b) has also an effect of improving the resolution.

As a result, it is possible to achieve both suppression of the impact on optical conditions when the acceleration voltage of the primary charged particle beam is changed, and increased device throughput.

Additionally, the following formula (1) is fulfilled: 4.18×V1.50≤t≤10.6×V1.54.

In the formula, V represents the acceleration voltage of the electron beam in kilovolts and t represents the thickness of the aforementioned active layer in nanometers.

Thus, even when the acceleration voltage of the electronic beam is as low as several kV, it is possible to use a mask called a membrane mask and perform pattern formation by one exposure even in a pattern of doughnut shape.