The circuit is preferably implemented in BICMOS technology.
The device supports data rates of up to 36Mbps, and is built in a 1.5ν/4GHz BiCMOS technology.
The present invention provides a BiCMOS integrated circuit (100) with bipolar (110), NMOS (112) and PMOS (114) transistors.
The device supports data rates of up to 36Mbps, and is built in a 1.5ν/4GHz BiCMOS technology.
The device supports data rates of up to 36Mbps, and is built in a 1.5ν/4GHz BiCMOS technology.
SiGe BiCMOS technology is implemented for the semiconductor components, which include a low noise amplifier (64) and an analog-to-digital converter (68).
The inventive multiplier in nearly full CMOS design has been constructed with a 1.2 ν BICMOS technology, having a multiplication time of 9 ns with a supply voltage of 5 volts.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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