In a one embodiment, a bulk portion of the donor substrate is removed while leaving a transferred layer (26) bonded to the receiving substrate.
A donor substrate (12) which is patterned to include a donor mesa (18) is bonded to a receiving substrate (20).
The donor is positioned over a receiver substrate, which may be patterned with additional transistor elements.
With the invention, bonding can be achieved despite having a non-planar surface on the receiving substrate.
The fluorinated polymer can then be removed, leaving the graphene attached to the surface of the receiving substrate.
Alternatively, the transferred layer can be formed over a dummy feature (46) formed on the receiving substrate, either with or without the use of mesas on the donor substrate.
The receiver engages one of the nips according to what surface finish is desired.
The disclosed subject matter provide techniques for transferring graphene onto a receiving substrate such as organic semiconductor thin-film.
A portion of receiving substrate can be processed to form a recess (27, 28, or 32) to receive the donor mesa.
The deposition inhibitor material can be patterned to provide selected areas on the receiver substrate where the deposition inhibitor is absent.
The transfer stamp can be positioned with the graphene contacting a surface of a receiving substrate, and pressure can be applied on the transfer stamp.
Apparatus for selectively providing a surface finish to a receiver having an image side, comprising three rotatable members forming two nips.
An inorganic thin film is then deposited on the receiver substrate using a chemical vapor deposition technique only in those areas where the deposition inhibitor material is absent.
The present invention also provides a method for catalyzing the transfer of a galactose residue from UDP-galactose onto an acceptor substrate in a recombinant lower eukaryotic host cell, which can be used as a therapeutic glycoprotein.
The cyanoacrylate polymer deposition inhibitor material can be applied by thermal transfer from a donor element to a receiver substrate before a patterned thin film is formed.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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