Because wafers from different processes and anneal locations may all have different emmisivities, use of the feedback loop will enable one edge ring to support the uniform anneal of wafers with a range of different emmisivities.

The epilayer is annealed and this relieves the strain and causes dislocations to terminate preferentially on the sides of the mesas.

Suitable fabrics for compacting are fabrics which comprise fiberglass fibers which are capable of first being compacted and then being heat set or annealed in the compacted state.

When necessary, the annealing of the hot-rolled sheet, after the finishing roll or an intermediate annealing during the cold-rolling (or hot-rolling) can be conducted.

  Consequently, the In-Ga-Zn-O thin film formed as an active layer with heating is capable of being more effectively annealed than an active layer of the same material deposited without heating.

The anneal is preferably a flash anneal or laser anneal.

In yet another embodiment of the present invention, the thermal annealing step may include a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike anneal.

The alloy is preferably cold-worked and annealed prior to force application/release cycling.

After annealing, the annealing insert is replaced by a packaging insert.

The apparatus may further include an annealing furnace for annealing the glass sheet.

A spike anneal or a laser anneal diffuses the implanted dopants into the IC substrate.

After the first annealing process, a second annealing process is performed.

Provided is an annealing apparatus which anneals a subject to be processed.

Further provided is an annealing process adopting the annealing device.

Because wafers from different processes and anneal locations may all have different emmisivities, use of the feedback loop will enable one edge ring to support the uniform anneal of wafers with a range of different emmisivities.