The interconnect layer (102) includes an interconnect structure (116A) and the interconnect structure includes an interconnect sidewall (114).

A metal interconnect structure and a method of manufacturing the metal interconnect structure.

A method of forming an interconnect structure and an integrated circuit including the interconnect structure.

An interconnect structure includes a plurality of nodes with a plurality of interconnect lines selectively coupling the nodes in a hierarchical multiple-level structure.

A interconnect assembly features a prefabricated interconnect structure metallurgically bonded to a terminal of a larger structure.

The optical interconnect structure includes a waveguide and a reflective structure.

The supportive interconnect structure includes a substantially annular insulative body and a plurality of vias.

A three-dimensional interconnect structure for microelectronic devices and a method for producing such an interconnect structure.

The interconnect structure includes a collection of synchronizing elements.

The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure.

An interconnect structure on a substrate is provided.

The interconnect structure is supported by a substrate (30) with the active components either on the substrate or on the interconnect structure itself.

The invention relates to an interconnect structure and method of its manufacture.

A method of forming an interconnect structure may also be provided.

An interconnect structure formed by the method is also provided.