The method further includes flowing an etchant source gas that comprises HCl, a chlorine-containing source gas, and an oxygen-containing source gas into the plasma processing chamber.

The process gas includes a gaseous source of carbon (such as methane (CH4)) and a gaseous source of halogen (such as a source of fluorine e.g., C4F8).

At least one emitter is in fluid communication with the liquid and gas sources.

The cleaning arrangement includes a gas source (700) for a hydrogen containing gas (100) and a hydrogen radical source (103).

Apparatus for carrying out the method includes a vessel (12) containing extract (26) and a source of the gas.

A first bulk gas source (110) and second bulk gas source (120) are connected to the mixing manifold (130) to introduce first and second gases to be mixed.

The attenuated threadlines are dried with a defined secondary gaseous source.

According to one embodiment, the system includes a first gas source providing nitrogen dioxide mixed in air or oxygen, and a second gas source supplying compressed air and/or compressed oxygen.

The injector assembly (150) fluidly communicates with a gas source and includes a plurality of hollow cathodes.

Systems for capturing or sequestering carbon from a gaseous source containing carbon oxides are also described.

The reactant vapors are composed of ammonia, a gaseous source of boron and silicon and a diluent gas and are fed at a gas flow rate such that the combined flow rate of boron and silicon is less than the flow rate of ammonia.

Tenax traps and wet impingers measure contaminants contained in the gas supply for a determined sampling interval.

In carrying out the process, gas is provided from a gas source from which the deposit may be formed by a plasma reaction.

A regulator mechanism (82) is disposed between and in fluid communication with the gas source and the supply valve.

The system also includes a ventilator coupled to the first and second gas sources, wherein the ventilator is resistant to nitrogen dioxide.