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semiconducteur MOS

metal-oxide semiconductor

électronique et électrotechnique - iate.europa.eu

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Effect of gan surface treatment on al2o3/n-gan mos capacitors...4931793The surface preparation for depositing Al2O3 for fabricating Au/Ni/Al2O3/n-GaN (0001) metal oxide semiconductor (MOS) capacitors was optimized as a step toward realization of high performance GaN MOSFETs...

électronique et électrotechnique / technologie et réglementation technique - core.ac.uk - PDF: krex.k-state.edu

Publications scientifiques

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Dipolar relaxation effects in al/sio2/si structures investigated by transient capacitance spectroscopy

La Spectroscopie de Transitoires Capacitifs (DLTS) dans les structures Métal-Oxyde-Semiconducteur (MOS) est généralement interprétée en supposant que le signal n'est dû qu'à l'émission thermique des porteurs piégés à l'interface Si/SiO2, dans le film de SiO2 ou dans le silicium...

... Enfin, l'origine physique de ces relaxations dipolaires est brièvement discutéeTransient Capacitance Spectroscopy (DLTS) in Metal-Oxide-Semiconductor structures is usually analysed assuming that the only contribution to the variations in the semiconductor surface capacitance originates in detrapping of carriers from defects at the Si/SiO2 interface or in the Si or SiO2 bulks...

général - core.ac.uk -

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With intrinsic-tuned technique in 0.13 m cmosAbstract—An intrinsic-tuned, 68 GHz voltage controlled oscillator (VCO) without an extra on-chip accumulation-mode metal oxide semiconductor (MOS)-varactor is demonstrated in a standard, 0...

communication / technologie et réglementation technique - core.ac.uk - PDF: citeseerx.ist.psu.edu

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Bayer pattern demosaicking using local-correlation approach... The raw output from a sensor, mostly a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) sensor, with a Bayer filter represents a mosaic of red, green and blue pixels of different intensity...

communication / électronique et électrotechnique - core.ac.uk - PDF: citeseerx.ist.psu.edu

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Design guide for cmos process on-chip 3d inductor using thru-wafer viasThree-dimensional (3D) inductors using high aspect ratio (10:1) thru-wafer via (TWV) technology in a complementary metal oxide semiconductor (CMOS) process have been designed, fabricated, and measured...

communication / technologie et réglementation technique / politique des transports - core.ac.uk - PDF: scholarworks.boisestate.edu

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Giant zero-drift electronic behaviors in methylammonium lead halide perovskite diodes by doping iodine ions... Ionic confinement structures of vertical metal oxide semiconductor (MOS) and lateral metal semiconductor metal (MSM) diodes designed to decouple ion-migration/accumulation and electronic transport are fabricated and characterized...

communication / électronique et électrotechnique / institutions de l'union européenne et fonction publique européenne - core.ac.uk - PDF: www.mdpi.com