Etch selectivity is utilized in etching recesses for the gate terminal.

Etch selectivity is greatly enhanced with the addition of hydrogen to the process chamber.

The composition are useful for obtaining improved etch rate, etch selectivity, etch uniformity and cleaning criteria on a variety of substrates.

Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius.

Fluorine from the polymer (30) was discovered to severely degrade the etch selectivity of Si3N4-to-TiSix.

The hardmask composition provides excellent optical properties, superior mechanical properties and high etch selectivity.

Different polymer (30) removing methods to restore etch selectivity of Si3N4-to-TiSix are provided which can be applied to any highly selective etching of oxide versus nitride.

The oxide layer (42) also functions as a mask during the etching of the metal interconnect, because oxide has good etch selectivity with respect to metal in Cl2 plasma.

Since the etch selectivity of the GaAs layer and the AlGaAs layer is close to 1, the sidewalls of the mesa are smooth.

The fin and the semiconductor layer are of different materials, and have etch selectivity with respect to each other.

To obtain good etch selectivity of SiO2-to-Si3N4, fluorocarbon plasmas containing high C/F ratio are employed.

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF6/O2 plasma.

These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques.

The method provides a selectivity for etching a silicon-containing dielectric layer relative to photoresist of at least 2 : 1.

These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques.