The present invention includes a method for patterning a bilayer resist having a patterned upper resist layer over a lower resist layer formed on a substrate.

In the lower resist etching step, the lower resist layer is etched in a plasma of a third process gas, using the upper resist layer as a mask.

A resist film (102) is formed on a substrate (101) using a resist material.

In one embodiment of the present invention, the method includes an optional upper resist layer trimming step, an upper resist layer treatment step, and a lower resist layer etching step.

Thereafter, the heated resist film (102) is developed to form a resist pattern (102a) from the resist film (102).

One solder resist is separated from another solder resist at least between the electronic component and the substrate.

In the upper resist layer treatment step, the upper resist layer is treated in a plasma of a second process gas to increase its etch resistance during the subsequent lower resist layer etching step.

In the upper resist layer trimming step, the upper resist layer is trimmed in a plasma of a first process gas.

A positive resist composition which is for forming a thick resist film having a thickness of 1-15 µm.

Also disclosed is a method for forming a resist pattern.

Previous Album Review: Within Temptation – Resist

The formed resist film (102) is then exposed pattern-wise by selectively applying an exposure light of an extreme ultraviolet light to the resist film (102).

Disclosed is a resist stripping agent which has excellent stripping properties, which has no flammability and therefore is safe, and which does not cause corrosion of a conductive material and therefore has excellent anti-corrosion properties.

Weekend Replay | The X-Files: Resist or Serve (PS2)

Within Temptation Announces New Album “Resist