The Young's modulus of the material of the stress relaxation portion (18) is lower than the Young's modulus of the material of the emitter electrode (16).
In addition, the gas for plasma reactions enables to form a fluorocarbon film having low stress relaxation even after a heat treatment.
The stress relaxation portion (18) is provided on the surface of the emitter electrode (16) only above the contact regions (10) and is formed of a conductive material.
The semiconductor device (100) comprises contact regions (10), an interlayer insulating film (14), an emitter electrode (16), and a stress relaxation portion (18).
Implementations described herein generally relate to methods for relaxing strain in thin semiconductor films grown on another semiconductor substrate that has a different lattice constant.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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