The semiconductor device includes a first semiconductor controlled rectifier and a second semiconductor controlled rectifier.

The first and second regions of the SCR are disposed in a current-carrying path between the anode and cathode of the SCR.

The method includes applying a mechanical stress to a region of a silicon controlled rectifier (SCR) at a level sufficient to modulate a trigger current of the SCR.

Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier.