A buried heterostructure (16/22, 18/22) confines injected carriers.
A semiconductor quantum well laser having separate lateral confinement of injected carriers and the optical mode.
Since, for example, an oxygen gas is introduced to the carrier recombination promoting layer at a high concentration, non-radiative recombination is promoted and the lives of injected carriers become shorter.
A buried heterojunction quantum well (22) within the optical confinement layers (16, 18) is dimensioned and arranged to confine injected carriers during laser operation.
Therefore, in the IGBT, density of the carriers injected into the peripheral region is lower than that of the active region.
The inventive device also includes means of containment for the carriers injected by the diode and the silicon of the active area is monocrystalline.
Partial shielding is also provided against carriers injected by nearby junctions (13) or introduced by charge pumping during circuit operation.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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