An apparatus for measuring minority carrier lifetime is provided.

A thickness of the intermediate epitaxial layer is greater than the diffusion length of a minority carrier in the intermediate layer.

The surface photovoltage signals are frequency calibrated and then used to calculated a minority carrier diffusion length.

Disclosed are minority carrier based mercury-cadmium telluride (HgCdTe) infrared detectors and arrays, and methods of making, are disclosed.

In the transistor's emitter regions (T1) n+ doping is applied, so that an inverse transistor (T3) is produced, which draws off the minority carrier current from the parasitic transistor (Tp).