The polishing step includes initial polishing and finalpolishing.
The polisher can improve polishing effect.
The polishing accelerator is composed of a polishing accelerator (1) and a polishing accelerator (2).
The present invention is a polishing pad for chemical-mechanical polishing, said polishing pad having at least a circular polishing surface.
A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation.
The polishing device (30) includes a first polishing unit (31) and a second polishing unit (32).
The chemical mechanical polishing pad provides an effect of maintaining a desired polishing rate during a polishing process.
Furthermore, a polishing agent composition including the polishing auxiliary agent and a polishing agent is provided.
Polishing can be done using a polishing tool, etching, particle jet polishing or other polishing method.
The polishing apparatus has a base portion to support a polishing media; and a polishing puck.
The substrate polishing and burnishing method comprises three modes of axial cut-in polishing and burnishing, radial cut-in polishing and burnishing and margin-leaving polishing and burnishing.
The polishing and burnishing device integrates a polishing machine and a burnishing machine.
The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation.
Disclosed are a polishing device and polishing method.
Disclosed is a chemical-mechanical polishing pad provided with a polishing layer, wherein recesses are disposed on the surface of the polishing layer for polishing.
The invention is directed to a multi-layer polishing pad (10) for chemical-mechanical polishing comprising a polishing layer (12) and a bottom layer (14), wherein the polishing layer and bottom layer are joined together without the use of an adhesive.
Disclosed is a polishing pad for chemical-mechanical polishing.
Compared to the case where the surface adsorption agent is removed from the polishing composition, the polishing composition reduces the surface defects of the polishing target after polishing.
In the polishing step, a soft polishing pad is used to subject the glass substrate to the polishing treatment.
The invention includes a method for preparing the polishing pad, and a polishing apparatus (200) comprising the polishing pad.
The polishing pad (44) includes a polishing surface and a back surface (112) that is opposite the polishing surface.
The polishing head thus prepared and the polishing apparatus accomplish a constant flatness and a constant polishing allowance.
A polishing pad for polishing the surface of a wafer for semiconductor integrated-circuit formation thereon, which has a high polishing rate, attains evenness of polishing, and has a long life.
The polishing method has a polishing step where the surface of the wafer is polished to a total polish margin without changing the polishing apparatus.
This polishing agent has excellent planarization characteristics for polishing.
An automatic polishing system (10) for polishing semiconductor material.
A rinsing polishing stage is operated after a primary polishing stage and/or a finishing polishing stage.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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