An RF plasma source power applicator is provided at the ceiling.

A technique for providing an inductively coupled radio frequency plasma flood gun (100) is disclosed.

A self-cleaning radio frequency (RF) plasma source for a semiconductor manufacturing process is described.

The process uses a radio-frequency inductively coupled plasma source (12) to generate a plasma at relatively low gas pressures.

The sterilization method includes placing a substance to be sterilized in a rotating chamber (e.g., drum) and exposing the substance to a radio frequency (RF) plasma.

Disclosed is a radio frequency (RF) antenna for plasma ion sources.

The radio frequency power supply system comprises a radio frequency power supply, and an automatic impedance matcher electrically between the radio frequency power supply and a plasma chamber.

The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.

An energizing RF signal is provided to transform the etch gas to a plasma.

Application to the driving of a resonator for producing a plasma spark for radiofrequency ignition.

A segmented radio frequency (RF) powered electrode for use in plasma processing.

An RF plasma source power applicator is provided at the ceiling.

A technique for providing an inductively coupled radio frequency plasma flood gun (100) is disclosed.

A radiofrequency voltage is applied at a level sufficient to ionize the gas into a plasma and to capacitively couple the ionized plasma with the tissue to deliver radiofrequency current to ablate or otherwise treat the tissue.

The capacitance is controlled to control the RF and resulting plasma coupling to the tuning ring.