The oxygen plasma also cleans the etch chamber.
The surface oxidation maybe performed using a dry oxygen plasma process.
The structure is then imparted by etching with an anisotropic oxygen plasma to the bottom resist and then to the substrate by plasma etching.
A stripping gas, such as a mixture of oxygen and argon is provided to the etch chamber and is energized to form an oxygen plasma.
The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
The Q/A of oxygen plasma treated PS powder initially shifted toward negative charge, but changed towards positive charge with higher oxygen concentrations.
A method and apparatus for the polishing of diamond surfaces, wherein the diamond surface is subjected to plasma-enhanced chemical etching using an atomic oxygen polishing plasma source, are disclosed.
The oxygen plasma strips the etch mask from the wafer and removes residual sidewall passivation.
Both sacrificial layers are then simultaneously removed in an oxygen plasma ash through lateral etc channels (15).
Clean PDMS is irreversibly bonded to clean glass by exposure to oxygen plasma.
Oxygen plasma treatment suggested the formation of hydroxyl and carbonyl groups on the surfaces of both PS and PMMA.
The surface treatment can be acid treatment, ultra-violet-ozone irradiation, or oxygen plasma treatment.
An oxygen plasma (58) may be applied to convert the etch stop layer (46) within the opening (54) to silicon dioxide (57).
The damaged surface layer is treated with an oxygen plasma to oxidize the damaged layer and convert the damaged layer into an oxide layer.
Potential anisotropic effects in diamond polishing are further limited in the present invention by the selective generation of low energy atomic oxygen plasma (502).
The method includes removing organic residue from the substrate using atmospheric oxygen plasma, and removing inorganic residue from the substrate using cryogenic C02.
An oxygen plasma can be applied to a seed layer on the exterior surface, and the non-wetting coating can be applied on the seed layer.
Upon activation by air or oxygen plasma, non-polar hydrogen bonds of the plastic polymers are replaced by oxygen bonds.
Since the CF film is decomposed by the oxygen plasma and the organic matter containing C and O is decomposed by the hydrogen plasma, cleaning of the processing chamber can be surely conducted while assuring a high cleaning rate.
The present invention is drawn to the generation of micropatterns of biomolecules and cells on standard laboratory materials through selective ablation of a physisorbed biomolecule with oxygen plasma.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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