At least one side of said intermediate contact panel is arranged as a lateral contact panel.
Wafer contact electrode assemblies (24) useful for supporting a wafer surface to be electroplated are disclosed herein.
The component (3) comprises through-holes (6) which pass through a contact plate (7).
Said contact plate (2) contains an alloy partner which can form an eutectic together with the semiconductor material.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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