Other wiring levels (5, 6) filled with insulating compound can be added.

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The field effect transistor assembly also comprises at least one vertical nanoelement as a channel region, which is situated between and coupled to both wiring planes.

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A metallized layer comprising a metal contact (4) of the at least one active component (2) is configured as one of the lower wiring planes.

The invention relates to an integrated circuit arrangement on the basis of III/V semiconductors, which comprises at least one active component (2) and a multilayer arrangement of wiring planes.

Other wiring levels (5, 6) filled with insulating compound can be added.

Overview of cable wiring of the installation synchronized with automation.

The wiring comprises a first wiring section and a second wiring section.

The first wiring layer has first wiring, and second wiring which is separated from the first wiring.

The first wiring and the second wiring extend along the gate wiring.

The second wiring layer has third wiring and a non-wire portion in which no wiring is provided.

The first wiring is disposed between the gate wiring and the second wiring.

One of either the first lead-out wiring, or the second lead-out wiring is connected to the second wiring, and the third lead-out wiring is connected to the fourth wiring.