A chemical mechanical planarization (CMP) system is provided.

Disclosed are a chemical mechanical planarization slurry and an application thereof.

A superconducting metal layer may be deposited by electroplating and/or polished by chemical-mechanical planarization.

An apparatus (100, 1200) and method (1100, 1300) for determining the chemical content of a chemical mechanical planarization (CMP) slurry.

Chemical mechanical planarisation (CMP), often called chemical mechanical polishing, is a procedure to level thin layers.

The excess material used for the lower electrode is then planarized by chemical mechanical polishing or planarization (CMP).

Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects.

The resulting microtopography can then be planarized more effectively by conventional chemical mechanical planarization methods.

A method for processing a wafer (108) using a chemical mechanical planarization (CMP) apparatus (100) is provided.

A method for improving uniformity of a chemical mechanical planarization (CMP) process for a metal plug in a post-gate process is provided.

The liquid is substantially evenly sprayed from the nozzle (208) onto the CMP polishing pad (14).

This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices.

Specific embodiments of the present invention are directed to a method of operating a modular chemical mechanical planarization process.

A CMP sample cell (112a, 112b, 400, 1208a) has windows (440, 442) for passing electromagnetic radiation (134, 136, 1212c).

The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof.