A pinned photodiode, which is a double pinned photodiode having increased electron capacitance and a method for forming the same are disclosed.

A four-layer pinned photodiode (100) is utilized as the photodetector, and each photodiode has its own antiblooming drain (130).

A pinned photodiode with a coupling capacity and an active pixel using it.

A pixel based on a pinned-photodiode structure that creates a lateral electric drift field.

The PIN photo diode has a structure that the light reception surface is surrounded by a groove of a predetermined depth.

An apparatus and method that reduces the dark current in each pixel of an image sensor, where each pixel has a pinned photodiode.

The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material.

Moreover, in the mesa type PIN photo diode not requiring positioning of an optical system, disconnection failure is often caused by the mesa step.

The method for producing this PIN photodiode provides that a vertical structuring is effected on the series of layers in order to form lateral walls, whereby the intrinsic layer is exposed to permit light to strike the same.

The invention relates to a PIN photodiode comprising a series of layers consisting of a first layer having a first type of conductivity, of an intrinsic layer, and of a second layer having a second type of conductivity.

The invention relates to, inter alia, a method for producing an integrated PIN photodiode comprising a buried region (20) and a connection region (32) which leads towards the buried region (20).

The active pixel comprises the pinned photodiode described above, a reset switch, a multi-functional switch between a variable voltage source and an output terminal of the coupling capacitor, and a signal amplifier.