An optical detector such as a pin photodiode or avalanche photodiode is provided with an integral dielectric filter.

A prior art semiconductor component representing a pin photodiode has a waffle-like structure in that a p region is arranged above and an n region below an intrinsic zone.

A nanowire-based photodiode 100 and an interdigital p-i-n photodiode 200 use an i-type semiconductor nanowire 140, 240 in an i-region of the photodiode 100, 200.

A p-i-n photodiode included a heavily dopes epitaxially grown layer of semiconductor.

A semiconductor p-i-n photodiode having a substrate, an n layer coupled to the surface of said substrate, an i layer coupled to the surface of said n layer, and a carbon doped p layer coupled to the surface of said i layer.

In a semiconductor p-i-n photodiode an undoped absorption region (10) is epitaxially grown between two highly doped regions (14, 16).

The detector structures consist of p-i-n photodiode structures, both diffused into and deposited on the surface of the silicon substrate.