The photodetector has a P-I-N structure.
In one embodiment, a p-i-n structure is formed with the interface layer at the p/i interface.
The ionizing radiation sensing element is a p-i-n structure fabricated by the planar technology.
The ionizing radiation sensor (sensing element) is a p-i-n structure fabricated by the planar technology.
This transistor consists of doped source (38-40), doped drain (12a) and undoped channel (12) in a p-i-n structure.
A prior art semiconductor component representing a pin photodiode has a waffle-like structure in that a p region is arranged above and an n region below an intrinsic zone.
A semiconductor p-i-n photodiode having a substrate, an n layer coupled to the surface of said substrate, an i layer coupled to the surface of said n layer, and a carbon doped p layer coupled to the surface of said i layer.
A p-i-n photodiode included a heavily dopes epitaxially grown layer of semiconductor.
The p-i-n diode may be formed from silicon.
The memory cell comprises the contiguous p-i-n diode and the MIM stack.
In one aspect, a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the p-i-n diode.
This p-i-n device is produced by depositing an intermediary region (20) having a compositional gradient on this substrate (10) and forming a germanium based p-i-n diode on the intermediary region (20).
A semiconductor p-i-n diode and method for forming the same are described herein.
The multiple P-N junctions or P-I-N junctions are contiguously joined to form a single contiguous P-N junction or a single contiguous P-I-N junction.
The semiconductor junction may be a p-i-n semiconductor junction, a p-n semiconductor junction, an n-p semiconductor junction or an n-i-p semiconductor junction.
The junction may be a p-n or a p-i-n junction between a p-doped area and an n-doped area.
The junction diode structure can include a p-n or a p-i-n junction.
The structures have p-n or p-i-n junctions for converting light into electricity.
The structures have p-n or p-i-n junctions for converting light into electricity.
lithium drifted p-i-n radiation detector
A p-i-n junction is formed about the ring resonator.
The two p-i-n structures may share either the p-type region or the n-type region as 5 a first terminal.
The material manufactured exhibits photovoltaic properties because the layers formed during the transformative process create a p-i-n, a p-n, or an n-n junction having a band-gap difference between the n-type layers.
A photosensitive electronic component based on amorphous silicon and its alloys consists of two anti-serially interconnected p-i-n or n-i-p structures or Schottky contact structures.
The PV module can be obtained by a method wherein the p-i-n or n-i-p silicon layer is locally heated whereby said silicon is transformed at these spots, after which the silicon at these spots is allowed to solidify in a transformed dtate.
The method further includes forming a p-i-n junction over the TCO layer, wherein the p-i-n junction contains a p-type Si-based layer disposed on the treated surface of the TCO layer.
Embodiments include a first p-i-n semiconductor junction combined with a second p-in semiconductor junction to form a monolithic photodetector having at least three terminals.
In addition, the i-layer is made thicker than the p-layer and the n-layer in each of the p-i-n junctions, thereby ensuring a sufficient light absorption and simultaneously preventing current loss.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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