The working electrode (21) contains at least one nitride selected from titanium nitride, zirconium nitride, hafnium nitride, tantalum nitride, molybdenum nitride, and iron nitride.
The nitride of a single metal is any one of titanium nitride, zirconium nitride, tantalum nitride and niobium nitride.
Ultrahard composite matrices involving combinations of nitride matrices such as titanium nitride/tantalum nitride, and titanium nitride/ chromium nitride are exemplified.
The metal nitride is titanium nitride, tungsten nitride or tantalum.
The nitride of a composite metal compound is an aluminum titanium nitride, a chromium titanium nitride, a zirconium titanium nitride or a titanium carbonitride.
The contact structure may be formed of p-type indium nitride, aluminum indium nitride, or indium gallium nitride.
The metallic nitride layer is preferably a titanium nitride.
The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride.
A carbon nitride nanotube loaded with platinum and ruthenium nanoparticles electrode catalyst contains 0.01-1.34 (in atomic ratio) of nitride in carbon nitride nanotube.
Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids.
A preferred crystalline material is gallium nitride, and preferred textured thin films are aluminum nitride and titanium nitride.
Subsequent to formation of the gallium nitride, an interfacial layer of silicon nitride may be formed between the silicon and the gallium nitride.
A Silicon Nitride layer is applied to the second Nickel Chromium Nitride layer.
In various embodiments the additives comprise at least one of zirconium nitride, thorium nitride, hafnium nitride, titanium nitride, or rare earth nitrides.
This boron nitride powder is produced when cutting boron nitride blocks made of hexagonal boron nitride.
The contact pads or the layer are selected among: aluminium nitride, boron nitride, silicon carbide, magnesium nitride, gallium and magnesium nitride, or a combination of same and the nitride compounds thereof.
The polymeric material may be silicone rubber, and the nitride or oxide may be aluminum nitride, boron nitride, silicon nitride, aluminum oxide or beryllium oxide.
The tantalum-containing material may include tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.
By further growing III nitride crystals, the void portions (2b) are filled with filler III nitride crystals (5) and III nitride crystals (6) are formed on the metal nitride film (4).
A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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