Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids.
A gallium nitride growth process forms crystalline gallium nitride.
A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors.
Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops.
A layer of single crystal gallium nitride (24) is formed upon the second layer of gallium nitride and aluminum nitride.
The layer of 2H-gallium nitride then is laterally grown to produce the gallium nitride microelectronic layer.
The at least one post includes a gallium nitride top and a gallium nitride sidewall (105).
The relaxed layer could include gallium nitride, the tensile layer could include aluminum gallium nitride, and the compressive layer could include aluminum indium gallium nitride.
The invention relates to a method and a device for producing gallium nitride or gallium aluminium nitride monocrystals.
The semiconductor layer includes gallium nitride.
The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer.
A layer region (67) is provided within the gallium nitride substrate (63) and the gallium nitride epitaxial film (65).
A gallium nitride semiconductor substrate is manufactured by using the thick film gallium nitride semiconductor layer.
The composite substrate (3) has a base (19) and a gallium nitride layer, and the aforementioned gallium nitride semiconductor layer (5) is provided on a principal surface of the gallium nitride layer.
There is provided a gallium oxide single crystal composite, comprising a gallium oxide single crystal and, superimposed on a surface thereof, a gallium nitride layer of cubic gallium nitride.
In one embodiment, this invention pertains to a process for making single crystal gallium nitride in the region of the phase diagram of gallium nitride where gallium nitride is thermodynamically stable.
A method for fabricating a device having a substrate (10) comprising III-N material, such as gallium nitride or aluminum gallium nitride.
A first method comprises growing gallium nitride on diamond and building devices on that gallium nitride layer.
The transition structure comprises a buffer formed of a first layer of gallium nitride and aluminum nitride (22), and a second layer of gallium nitride and aluminum nitride (23) adjacent to the first layer.
The interface of the gallium nitride substrate (63) and the gallium nitride epitaxial film (65) is located within the layer region (67).
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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