Also disclosed is a microfine resist pattern.

Further disclosed is a resist substrate treatment solution for achieving the microfine resist pattern.

  Then, second development is performed to the heated first resist pattern (102a), and a second resist pattern (102b), i.e., a reduced first resist pattern (102a), is obtained.

  Subsequently, the pattern-exposed resist film is developed, thereby forming a resist pattern (102a) from the resist film.

There are provided a resist composition that produces a resist pattern of good shape, and a method of forming a resist pattern that uses such a resist composition.

  After that, the pattern exposed resist film (102) is heated and the heated resist film (102) is developed, thereby forming a resist pattern (102a) from the resist film (102).

A negative resist composition that is highly sensitive and is capable of forming a resist pattern of high resolution; and a relevant method of forming a resist pattern.

The electrode pattern for mounting is formed by partitioning part of the electrode pattern, using a linear resist pattern.

The composition can form a planar film with excellent long-term stability over a resist pattern regardless of the line density of the resist pattern.

Thus, the hardened film is formed on the inner wall face of the recess of the resist pattern so that the resist pattern is reduced in size.

A first resist film is formed on said silicon base layer, the first resist film having a desired resist pattern.

Moreover, it is possible to reduce the cost required for formation of the resist pattern as well as the time required for formation of the resist pattern.

There is provided a photoresist composition capable of forming a resist pattern with minimal LER, and a method of forming a resist pattern.

There is further provided a method of forming a resist pattern therewith.

The method for forming a fine pattern comprises a step for processing a resist pattern with such a composition.