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défense - iate.europa.eu
défense - iate.europa.eu

Publications scientifiques

New high-speed a-si/c-si- anda-sic/c-si-based switches...
général - core.ac.uk - PDF: doaj.org
Derivatization of photoactive structures si(n+)/si(p)/si(p+) through ion-beam crystallization... The optimum conditions for the process: residual pressure in the growth chamber — 10−4 Pa; the substrate temperature — 550 °C; ion current density — 2 mA/cm2; acceleration voltage — 400 V; target — substrate distance — 150 mm are determined....
général - core.ac.uk - PDF: vestnik.donstu.ru
Vibrational modes in raman and infrared spectra of amorphous silicon. ⅰ. si-si, si-h, and si-f bonds...
général - core.ac.uk - PDF: repository.tsuyama-ct.ac.jp
Strain control of si and si1-xgex layers in the si/si1-xgex/si heterostructures by stripe-shape patterning for future si-based devices...
général - core.ac.uk - PDF: ecst.ecsdl.org
Possibilities for lwir detectors using mbe-grown si(/si(1-x)ge(x) structures...
général - core.ac.uk - PDF: hdl.handle.net


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