A polishing slurry for low dielectric material is disclosed.

Provided are a low dielectric material with array holes and preparation method thereof.

In exemplary embodiments, the inner core region is made of a low dielectric material, and the outer regions include alternating layers of low and high dielectric materials.

The present invention relates to a low dielectric material essential for a next generation electric device such as a semiconductor device, with a high density and high performance.

The low dielectric material with array holes comprises silicate gel and a plurality of holes penetrating said silicate gel, wherein said plurality of holes are arranged in the form of an array.