The deposited material has an affinity for a specific target material.
The deposited material can be a semiconductor, insulating or passivation material, for example aluminium nitride.
A three dimensional element 100 is formed by depositing material on the surface 20, and subsequently curing the deposited material.
Selective adsorption resist is a resist that allows a deposited material to penetrate the resist such that the resist will reform on the top of the deposited material.
The post-treatment process may be an ultraviolet radiation cure of the deposited material.
A second material is deposited on the deposited first material.
The conductive material with low electronic affinity is a material deposited in amorphous form.
A system and method of inspecting material laid by a material placement machine.
Other embodiments form multi-layer structures using operations that interlace material deposited in association with some layers with material deposited in association with other layers.
The sacrificial material is deposited in droplets in a controlled manner so as to control the x, y, z dimension of the material deposited and preferably has having an average diameter of l0µ (10 microns) or more.
The present invention removes unwanted deposited material (22) from a substrate backside (14) by chemically etching the material, while substantially preventing dissolution of the material from the substrate front side (12).
The spreader (70) is used to set the height of the material being delivered onto the belt (72).
Additionally, the specific acoustic impedance (or equivalent z-ratio) of an unknown deposited material can be determined.
The zinc sulfide or zinc selenide may be chemical vapor deposited material.
The concave edge (828A, 828B) of the pin is especially adapted for helping to control the spreading of a deposited material.
The material deposited (11) is a resilient material, for example silicon rubber, which sets to provide solid, discrete elements without the need for a separate adhesion step.
Another effect is that the thickness of deposited material is directly determined by the speed of the web.
The process can be used to tailor the composition and morphology of the material deposited on a substrate.
Walls (61) of silicon dioxide are created around the stacks in order to insulate the material within the stacks from the material deposited outside of the walls.
This invention relates to a method of filling at least one trench or other opening in a substrate including depositing a dielectric material into the trench or opening and annealing the deposited material during or after the application of pressure.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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