The extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6).
The university plans to utilize one EVG6200 for bond alignment and nanoimprint lithography (NIL), and the other for lithography mask alignment.
Techniques are provided for determining how thick or how deep to make the phased regions of a lithography mask.
The university plans to utilize one EVG6200 for bond alignment and nanoimprint lithography (NIL), and the other for lithography mask alignment.
An imprint lithography mask for manufacturing a memory layer in a three dimensional crosspoint memory is described.
Disclosed are a photoresist topcoat for use in a mask for extreme ultraviolet lithography, and a composition for preparing the photoresist topcoat.
A method and system are disclosed for aligning a lithography template (120) having a pattern with a sunstrate (130) in preparation for transferring the pattern to a surface of the substrate (130).
Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3).
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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