Imece2011-63505 dry etching process on a conducting interpenetrating polymer network actuator for a flapping fly micro robotIn this paper we report on conducting polymer micro-actuators which have been fully patterned using photolithography and plasma dry etching processes....
High-performance normally-off al2o3 gan mosfet using a wet etching-based gate recess technique... The wet etching process eliminates the damage induced by plasma bombardment induced in conventional inductively coupled plasma dry etching process so that good surface morphology and high interface quality could be achieved....
Silicon nanopillar arrays with sio2 overlayer for biosensing application... Colloidal lithography, plasma dry etching and deposition processes are used to fabricate SiO2 coated Si nanopillar arrays with two different diameters and periods....
Thermal oxidization of mis interface between etched gan and ald-al2o3 tetsuya fujiwara, 1... The thermal oxidization at 900 °C for 3 min in N2/O2 ambient after BCl3 plasma dry etching for a recessed-gate structure reduces not only a typical value of Dit fro
