A laser lithography system in which two or more lasers provide laser illumination for two or more lithography exposure tools (11-13) through a laser beam multiplexer (72).
In one embodiment the present invention includes a direct-write laser lithography system.
The mask structure (220) may be formed from a multilayered structure on the surface of the substrate (100) using a laser lithography process.
The presence of the amine derivative allows the resist composition to form a finer resist pattern, and thus the resist composition can be suitably used particularly in a lithography using ArF excimer laser.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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