Optical monitor structures based on PIN diodes take advantage of the materials disclosed.
In operation when transmitting in one of the bands, the first and second PIN diodes of the relevant coupling stage are switched-on, whilst the PIN diodes in the other coupling stage are off and when in a receiving mode all the PIN diodes are off.
A transformation system (3) is provided between the PIN diodes (1, 2) in the series arm.
Thus, opto-coupled MOSFETS, pin diodes, or other kind of solid state switches, may be utilized.
A first, a second, and a third biasing source for forward biasing the PIN diodes.
Various ones of the SPIN devices can be activated to electronically paint a conductive pattern upon the substrate supporting the PIN devices.
Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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