The boron may include boron carbide.

f. High energy density materials 4.C.3.

Pyrolytic boron nitride, highly oriented pyrolytic boron nitride, and cubic boron nitride are particularly suited.

c.5.b.2. does not apply to boron and boron carbide enriched with boron-10 (20 % or more of total boron-10 content).

ML8.c.5.b.2. does not apply to boron and boron carbide enriched with boron-10 (20 % or more of total boron-10 content.

The third material is from a group including boron or boron carbide.

ML8.c.5.b.2. does not apply to boron and boron carbide enriched with boron-10 (20 % or more of total boron-10 content).

ML8.c.5.b.2. does not apply to boron and boron carbide enriched with boron-10 (20 % or more of total boron-10 content).

c.5.b.2. does not apply to boron and boron carbide enriched with boron-10 (20 % or more of total boron-10 content.

c.5.b.2. does not apply to boron and boron carbide enriched with boron-10 (20 % or more of total boron-10 content.

The boron compound used in the chemical treatment of this invention is boron halide, preferably boron trichloride.

The second material is from a group including carbon, silicon, boron, boron carbide or silicon carbide.

The boron compound preferably contains at least one type of boron compound selected from a group comprising boric acid, zinc borate and boron oxide.

The fourth material is selected from a group including silicon, boron, boron carbide or silicon carbide.

Relationship (1): quantity of boron contained in the boron-containing flux component/ quantity of the crude boron nitride ≤ 1.4wt%.