See information sheet “Latching and Feeding Management”.

However a too important gain will involve a high risk of latching

However a too important gain will involve a high risk of latching

However a too important gain will involve a high risk of latching

However a too important gain will involve a high risk of latching

The two men had to replace a Latching End Effector (LEE) on the ISS's robotic arm the Canadarm2.

During the first spacewalk, Bresnik and Vande Hei will replace one of two Latching End Effectors (LEE) on the station’s robotic arm, Canadarm2.

The equivalent diagram of transistor IGBT opposite watch a third transistor, which represents in fact a property parasitises responsible for the latching.

The equivalent diagram of transistor IGBT opposite watch a third transistor, which represents in fact a property parasitises responsible for the latching.

The first generation of transistors IGBT presented big problems of locking, which were corrected in the second generation appeared with the beginning of the year 1990.

The first generation of transistors IGBT presented big problems of locking, which were corrected in the second generation appeared with the beginning of the year 1990.

The first generation of transistors IGBT presented big problems of locking, which were corrected in the second generation appeared with the beginning of the year 1990.

The first generation of transistors IGBT presented big problems of locking, which were corrected in the second generation appeared with the beginning of the year 1990.

Nevertheless a technology known as of grid in trench is also used: the zone of epitaxy is cut out under the grid so as to decrease the phenomena of latching and to thus allow more important densities of current.

Nevertheless a technology known as of grid in trench is also used: the zone of epitaxy is cut out under the grid so as to decrease the phenomena of latching and to thus allow more important densities of current.