The semiconductor junction in the drain region is a P-N junction, and the semiconductor junction in the source region is a metal semiconductor junction.

The reset junction and the photo-dector junction are of the same polarity.

The semiconductor junction may be a p-i-n semiconductor junction, a p-n semiconductor junction, an n-p semiconductor junction or an n-i-p semiconductor junction.

  The junction is provided with a recessed portion communicating with the outside from between the electrode portion and the junction.

The fixable pivot junction also includes a collar configured for fixating the pivot junction.

The junction and barrier layers in the junction are formed by atomic layer-by-layer deposition.

The thermopile generates electricity from a temperature gradient between the hot junction and the cold junction.

The flange portion is used as the joining surface of the rib (13) to the sleeve (16) in order to expand the joining area and thereby improve the joining strength.

After the junction is formed, the ions are polymerized in situ, and the junction is locked thereafter.

Enhanced junction strength can be achieved by junction of the members to be joined (10A,10B) at the high pressure force (P2) (joining step).

A program junction oxide layer overlies said program junction region.

The reduction in junction area, and also the junction capacitance, is accomplished by subdividing the junction into a plurality of smaller junctions, or subjunctions (22a, 22b).

Oxygen can be removed from the junction, thereby decreasing the critical current density of the junction.

Seals (47, 50, 54) are fitted in the connection to the connection line (55).

An MTJ mask is used to pattern the MTJ and is etched to expose the MTJ.