The comb fingers include a p-type layer and an n-type layer forming a diode junction in each finger.

The tunnel diode includes a second PN junction.

temperature-dependent p-n junction diode

The junction diode structure can include a p-n or a p-i-n junction.

The diode junction may be a p-n junction (40) or a Schottky barrier (40').

Junction diode assembly formed In enclosed trenches occupies less chip area compared with junction-isolation diode assembly In the known art.

The junction layer forms a quantum well of the laser diode.

A semiconductor junction type diode device is provided.

The invention relates to a semiconductor device (30) comprising a Schottky diode of the trench-junction-barrier-type with integrated pn diode, and method for producing the same.

wherein each of said containers comprises an outer enclosure and an inner liner;

Every array has a lower bound (Lbound) and an upper bound (Ubound).

A projection apparatus (300) includes at least one laser diode (360) and a laser diode junction temperature estimator (310) to estimate the junction temperature of the at least one laser diode.

A laser diode supply circuit comprises a laser diode (LD1) connected in series with a junction transistor (TR1).

Hence there is no increase in the junction capacitance of the input protective diode due to the pattern of the diode (40).

A semiconductor laser diode comprises a p-n junction.