Dictionnaire français - anglais

électronique et électrotechnique - iate.europa.eu
Lorsqu'on inverse cette tension, la jonction émetteur-base subit une polarisation inverse et la jonction collecteur-base est désactivée.

When the supply voltage is reversed, the emitter-base junction is reverse biased and the collector-base junction is turned off.

électronique et électrotechnique - wipo.int
La jonction collecteur-base est toujours soumise à une tension inverse.

The collector-base junction is always in reverse bias.

général - CCMatrix (Wikipedia + CommonCrawl)
Le dopage additionnel du collecteur est réalisé le long d'une jonction collecteur-base sous la base proprement dite (76A) pour créer une zone collectrice spéciale (88), espacée latéralement de la région de couche d'oxyde (64).

The extra collector doping is provided along collector-base junction below the intrinsic base (76A) to create a special collector zone (88) spaced laterally apart from the field-isolation region (64).

électronique et électrotechnique - wipo.int
Electrical characterization of sipos mesa power transistors electric field repartition in the collector-base junction
... Des courbes de multiplication ont pu être obtenues dans la zone de charge d'espace de la jonction collecteur-base polarisée en inverse lorsque le faisceau balaye perpendiculairement le plan de la jonction....
... Multiplication curves can be obtained in the space charge region when the beam scans over the reverse biased collector-base junction which allows the determination of the electric field repartition as function of reverse bias (when a multiplication effect occurs).
Europe - core.ac.uk -
Oscillations in collector current of a double heterostructure bipolar transistor: a quantum effectIn spite of many advantages, GaInP/GaAs/GaInP double heterostructure bipolar transistors (DHBT) suffer from the disadvantage of energy barrier to flow of carriers at the collector-base junction due to non-zero conduction band edge discontinuity which results in higher VD,sat....
général - core.ac.uk - PDF: digitalscholarship.unlv.edu
A new lateral pnm schottky collector bipolar transistor (scbt) on soi for nonsaturating vlsi logic design... The collector-base junction of the proposed lateral PNM transistor consists of a Schottky junction between n-base (N) and metal (M)....
Determination of the excess carrier lifetime in the collector region of silicon power bipolar transistors... Based on the measurement of the common-emitter collector characteristics and the collector-base junction C-V characteristics of the transistors, this method is also very simple and practical, The calculation results show that the excess carrier lifetime determined...
Ultra high speed heterojunction bipolar transistor technology... Key bandwidth limits include scaling of the collector-base junction, the emitter Ohmic contact resistivity, and greatly increased current density....
jonction collecteur-base
électronique et électrotechnique - iate.europa.eu
Hot electron interactions in nanostructures... Moreover, the dependence of the effect on parameters such as injectionenergy, emitter and collector barrier heights and electron transit length has beeninvestigated....
général - core.ac.uk - PDF: core.ac.uk
Transport properties of iii-n hot electron transistors... Upon arrival at the collector barrier, high-energy electrons pass over the barrier and contribute to collector current while low-energy electrons are quantum mechanically reflected back into the ...
Design of iii-nitride hot electron transistors... The hot electron transistor (HET) is a unipolar vertical device that operates on the principle of injecting electrons over a high-energy barrier (ϕBE) called the emitter into an n-doped region called base and finally collecting the high energy electrons (hot electrons) over another barrier (ϕBC) called the collector barrier....
The growth of resonant tunneling hot electron transistors using chemical beam epitaxy...AlAs/In0.75Ga0.25As/AlAs double barrier structure and an undoped InP collector barrier with 1.1...
 PDF: dx.doi.org
The effect of the first barrier thickness on resonancetunnelling and carrier accumulation in undoped singlequantum well infrared photodetectors...Al0.27Ga0.73As collector barrier....
électronique et électrotechnique - iate.europa.eu
Cmos optoelectronics: implementation and application.... A conventional BJT structure with a small emitter area has been optimized to enhance the photocurrent and utilize the parasitic photodiode formed at the base-collector junction as a PSD....
général - core.ac.uk - PDF: scholar.uwindsor.ca
Comments on “a compact physical large-signal model for high-speed bipolar transistors at high current densities-part i: one-dimensional model”... However, the hase-collector junction capacitance model is questionable in the sense that the base-collector junction capacitance becomes more important, rather than being negligible, as suggested by Stiibing and Rein, in the high current region....
Vapor grown silicon dioxide improves transistor base-collector junctionsVapor grown silicon dioxide layer protects base-collector junction in silicon planar transistors during the emitter diffusion process....
Improving the accuracy and efficiency of junction capacitance characterization: strategies for probing configuration and data set size... Intrinsic base-collector junction capacitance....
électronique et électrotechnique - iate.europa.eu
Sige microwave power heterojunction bipolar transistor... The current gain of the SiGe HBT is 50 - 320, the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V respectively....
général - core.ac.uk - PDF: www.scopus.com
Numerical study of the chimney-collector junction geometry influence on the solar chimney performancesThe aim of this work is to study the influence of the chimney-collector junction geometry on the performance of the solar chimney CCS....
 PDF: doaj.org

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Traductions en contexte français - anglais

calculé : c’est la présence de la capacité de la jonction collecteur-base.

But it’s actually there; The parasitic capacitance of the collector-emitter junction.

général - CCMatrix (Wikipedia + CommonCrawl)


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