The etching may suitably comprise chemical etching, electro-chemical etching or pulsed electro-chemical etching.
An etch gas source supplies an etch gas into the etch reactor.
The etch stop structure is formed by etching a layer of etch stop material.
The dry etching may use an ion milling and a reactive ion etching (RIE).
The etching step is performed by wet etching in which an etching solution is used.
An engraving head apparatus (figure 1) and method for engraving a gravure cylinder (24).
An engraving head apparatus (30) and method for engraving a gravure cylinder (24) is disclosed.
The invention relates to an engraving mechanism of an electronic engraving machine for engraving printing cylinders.
The gravure cells may be formed by diamond engraving, and the step of removing portions of the gravure cells may be accomplished by engraving or etching.
This invention relates to an engraving system (10) and method for engraving a pattern using a plurality of engraving devices.
The wafer surface is treated by alkaline-etching or alternatively acid-etching.
Subsequently, the other one of the alkaline- etching an acid-etching of the wafer surface is performed.
An etching installation contains an etching machine (1) in which the etching agent is enriched with metal that has been etched away during the etching process.
The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
In the etching step, etching may also be performed using the etching liquid for 15-40 minutes.
The etching layer is configured to aid in etching the substrate.
Also disclosed is an etching method using the etchant.
The etch of the P channel (38) gate stack is completed with a wet etch.
to raise the lip of the channel
I continue working with my favourite technique - hand-held print (etching, linoleum engraving, polyvinylchloride engraving, xylography (wood-engraving).
Because of its relative simplicity, etching rapidly rivalled engraving as a printmaking medium.
During a sample engraving, trial cups (19) are engraved for predetermined tone values by an engraving element.
An engraving control signal for guiding the burin of a graving element is formed from engraving data representing the predetermined tonalities that are to be engraved.
During the etching process, an amount of the etchant is fed into an etch chamber for removing the sacrificial material.
When a contact (76) is etched through the third dielectric, this selective etch stops on the dielectric etch stop layer.
Further, there are disclosed a process for producing the etching solution and a method of etching with the use of the etching solution.
ARCs of the invention are etch resistant and that exhibit increased etch rates in standard plasma etchants.
The etching is discontinued before all of the resist is consumed by the etching.
An etching step, in which the sacrificial layer (21) is removed by etching, is performed.
The discharge of each charge of etching gas is terminated while there is a sufficient amount of etching gas remaining to support a desired flow of etching gas into the etching chamber.
The etching process is stopped when an etching stopper layer (5) is reached.
A method for etching silicon by using the etchant is also disclosed.
Thereafter, the remaining portion is removed by isotropic etching, thereby suppressing side etching.
During the etching, copper nanoparticles enhance or drive the etching process.
A method and apparatus for performing a dielectric etch, etch mask stripping, and etch chamber clean.
The dry etching method employs either of these dry etching gases.
The acid etching process may utilize a glass etching cream.
A method providing features in a etch layer is provided.
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