The pattern defined by the spacer material (140) may be transferred to a substrate, to form on pitch contacts.

To fabricate contacts on a wafer backside, openings (124) are formed in the face side of the wafer (104).

The process forms ohmic contacts and Schottky contacts.

Metal contact fingers may be formed over the wafer to form electrical connections to corresponding diffusion regions through the contact regions.

Gate aligned contacts and methods of forming gate aligned contacts are described.

The levers (21) have sharpened ends and are effective to pierce any oxide coating which may form on the edge contacts (26).

Schottky contacts made of a semiconducting material are provided to form the tunnel contacts.

Roller contacts and pogo pin contacts fall within the scope of the invention.

The contacts of the elements are connected to form a Wheatstone bridge.

The invented method can be used to form silicide contacts to an integrated MISFET device.

Contacts on or near a surface are tracked to obtain touch information of the contacts.

Internal electric contacts are disposed on the inner faces and external electric contacts are disposed on the outer faces, said internal and external contacts being electrically connected in pairs.

The contacts are disposed on the front surface, and a distribution of the contacts on the first side exceeds a corresponding distribution of the contacts on the second side.

Meanwhile, bonding patterns are formed on a submount substrate, and the light emitting cells of the first and second serial arrays are flip-bonded to the bonding patterns.

One or more of the circuit components may be welded or soldered together to form electrical contacts.