A spectral purity filter is configured to transmit extreme ultraviolet (EUV) radiation and deflect or absorb non-EUV secondary radiation.
An optical collector (15) for collecting extreme ultraviolet radiation or EUV light generated at a central EUV production site comprises a reflective shell (25).
EUV Litho honored EUV Technologies with the ‘Outstanding Contribution Award' at the International Workshop on Extreme Ultraviolet (EUV) Lithography 2012 hosted by EUV Litho.
Specially designed for Extreme Ultraviolet' (EUV') lithography; and
EUV Litho honored EUV Technologies with the ‘Outstanding Contribution Award' at the International Workshop on Extreme Ultraviolet (EUV) Lithography 2012 hosted by EUV Litho.
The invention relates to an EUV lithography system, comprising: an EUV light source for generating EUV radiation as well as at least one cable (33) running in a beam guidance chamber of the EUV lithography system.
The EUV mirror (13) has at least one EUV attenuator arranged in front of it.
An illumination system for EUV microlithography comprises an EUV light source (3) which generates EUV illumination light (10) with an etendue that is higher than 0.01 mm2.
The invention also relates to an EUV lithography apparatus comprising at least one such EUV mirror (13) and to a method for operating such an EUV lithography apparatus.
The invention relates to a projection illumination system (1) for EUV microlithography, having an EUV synchronous light source (2) for generating useful EUV light (3).
Provided is an EUV light generating apparatus which can output EUV light having sufficient intensity without causing a problem of a plasma EUV light source (generation of debris).
The EUV radiation is generated from a plasma (12) , which emits both EUV radiation and electrically charged particles.
Specifically disclosed is a reflective mask blank for EUV lithography wherein a reflective layer for reflecting EUV light and an absorbing layer for absorbing EUV light are formed on a substrate in this order.
The reflective mask blank for EUV lithography is obtained by forming, on a substrate, at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light in this order.
An EUV exposure apparatus is also provided.
Pulsed DC electric fields are applied to the path of EUV light to reject ions from the EUV path.
Provided is an EUV mask blank comprising a low-reflection layer that has excellent EUV mask blank characteristics.
An EUV lithographic apparatus includes an EUV radiation source, an optical element (50) and a cleaning device (95) .
EUV light radiated from high-temperature plasma (P) is collected onto a focal point (f) via an EUV condenser (6), then emitted from an EUV light emitting port (7) and irradiated onto an exposure device (30).
An illumination system for EUV lithography is used for illuminating a predetermined illumination field (2) of an object surface with EUV radiation (4).
The reflective mask blank for EUV lithography comprises a substrate and, formed thereover in the following order, a reflective layer which reflects an EUV light and an absorber layer which absorbs the EUV light.
An EUV lithography system 1 comprises an EUV beam path and a monitor beam path 51.
The system is cooperable with a mirror (28) for harnessing the EUV radiation by reflecting EUV radiation impinging thereon.
A Gleaning arrangement (250) is provided for use in an EUV lithographic apparatus, for example an EUV lithographic apparatus with a Sn source.
The result is an EUV collector in which an optimized collectable solid angle of the EUV radiation source is obtained with a given amount of constructional effort.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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