To this end, a Gunn effect semiconductor component such as a GaAs-hetero-bipolar transistor (HBT) for the variable and regulatable production of electrical oscillations is provided, comprising a thick collector (3).
The invention relates to a Gunn effect semiconductor component such as a GaAs-hetero-bipolar transistor (HBT) for the variable and regulatable production of electrical oscillations.
The transmitter can be a Gunn effect or Impatt type of device of which the non-linear impedance characteristic ensures generation of the required combined signal at a bias port of the transmitter.
The invention relates to a Gunn-diode, comprising an active area (2) which exerts a Gunn-effect, and an injector (4, 5, 6).
The invention relates to a layered construction for a Gunn diode.
A Gunn diode comprises a plurality of transit regions (3, 4).
Therefore, the GTL interface level can be converted into a higher level at a high speed.
The field-effect transistor (11) converts the level of the input signals, i.e., the GTL interface level, into a level at which the transistor (14) operates and further raises the converted level.
A microwave oscillator comprises a semiconductor oscillating element, e.g. a Gunn diode (3) mounted at least partially within a dielectric substrate (1).
According to the present invention, cavity-rear reflect plates, screws and Gunn diodes are located at certain heights and with certain distances from each other on a radiative dielectric wave guide.
Because the internal circuit of the present invention's radio repeater is in an amplifier structure, which uses a simple Gunn diode, the circuit is simple and, thus, power consumption may be reduced.
The formation of the closed region of the spatial charge is demonstrated with the aid of the following nonplanar semiconductor devices: a bipolar transistors, a thyristor, an avalanche diode, a Gunn diode and variants thereof.
According to the present invention, it is possible to tighten or loosen the screws according to the frequency band or it is possible to control the distance between the rear reflect plates and the center of Gunn diodes.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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